THEORY OF ALLOY BROADENING OF DEEP LEVELS IN SEMICONDUCTOR ALLOYS - NITROGEN IN ALXGA1-X AS

被引：23

作者：

FORD, WC

MYLES, CW

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.34.927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：927 / 931

页数：5

共 52 条

[1] ASGA ANTISITE DEFECT IN GAAS [J].

BACHELET, GB ;

SCHLUTER, M ;

BARAFF, GA .

PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547

[2] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[3] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[4] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[5] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1980, 21 (08) :3545-3562

[6] ELECTRONIC-STRUCTURE OF DEEP SP-BONDED SUBSTITUTIONAL IMPURITIES IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST ;

SCHEFFLER, M .

PHYSICAL REVIEW B, 1982, 26 (10) :5706-5715

[7] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[8]

BOLZAROTTI A, 1984, PHYS REV B, V30, P2295

[9] SEMICONDUCTOR PSEUDOBINARY ALLOYS - BOND-LENGTH RELAXATION AND MIXING ENTHALPIES [J].

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW B, 1985, 32 (06) :3695-3711

[10] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP [J].

CHEN, AB ;

SHER, A .

PHYSICAL REVIEW B, 1981, 23 (10) :5360-5374

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