POINT-DEFECTS IN GAP, GAAS, AND INP

[61] ELECTRON-CAPTURE LUMINESCENCE IN GAP-O REVISITED [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (10): : 1507 - 1518

[62] GLORIOZOVA RI, 1978, SOV PHYS SEMICOND+, V12, P66

[63] EPR MEASUREMENTS ON GAAS-CO [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (01): : K11 - K13

[64] OBSERVATION OF PARAMAGNETIC RESONANCE CENTERS IN GAAS IN UNUSUALLY HIGH CONCENTRATIONS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (07) : 130 - 132

[65] EPR MEASUREMENTS ON CHROMIUM DOPED GAAS, GAP AND INP [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (10) : 897 - 900

[66] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 341 - 376

[67] GRIMMEISS HG, 1981, UNPUB PHYS REV B

[68] GROSS EF, 1969, FIZ TVERD TELA+, V11, P277

[69] GUILLOT G, 1981, C SER I PHYS, V59, P323

[70] HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161

[61] ELECTRON-CAPTURE LUMINESCENCE IN GAP-O REVISITED [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (10): : 1507 - 1518

[62] GLORIOZOVA RI, 1978, SOV PHYS SEMICOND+, V12, P66

[63] EPR MEASUREMENTS ON GAAS-CO [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (01): : K11 - K13

[64] OBSERVATION OF PARAMAGNETIC RESONANCE CENTERS IN GAAS IN UNUSUALLY HIGH CONCENTRATIONS [J]. APPLIED PHYSICS LETTERS, 1963, 2 (07) : 130 - 132

[65] EPR MEASUREMENTS ON CHROMIUM DOPED GAAS, GAP AND INP [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (10) : 897 - 900

[66] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 341 - 376

[67] GRIMMEISS HG, 1981, UNPUB PHYS REV B

[68] GROSS EF, 1969, FIZ TVERD TELA+, V11, P277

[69] GUILLOT G, 1981, C SER I PHYS, V59, P323

[70] HAISTY RW, 1964, PHYSICS SEMICONDUCTO, P1161