DIFFUSION OF PHOSPHORUS IN SILICON

被引：15

作者：

YOSHIDA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 09期

关键词：

D O I：

10.1143/JJAP.22.1404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1404 / 1413

页数：10

共 20 条

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[5]

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[8]

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[9] CONFIRMATION OF SURFACE EFFECT UPON PHOSPHORUS DIFFUSION INTO SILICON [J].

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YOSHIDA, M ;

NIMI, T .

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[10] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday [J].

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