EFFECTS OF DEPOSITION RATE ON THE SIZE OF SELF-ASSEMBLED INP ISLANDS FORMED ON GAINP/GAAS(100) SURFACES

被引：6

作者：

REAVES, CM

BRESSLERHILL, V

WEINBERG, WH

DENBAARS, SP

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,DEPT CHEM & NUCL ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 11期

关键词：

ATOMIC FORCE MICROSCOPY (AFM); INP/GAINP; QUANTUM DOTS; SELF-ASSEMBLED STRUCTURES; STRANSKI-KRASTANOV GROWTH;

D O I：

10.1007/BF02676818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Utilizing the Stranski-Krastanov growth mode, three-dimensional InP islands are formed on a GaInP/GaAs surface using metalorganic chemical vapor deposition. The islands have been investigated with atomic force microscopy, and the effect of the deposition rate on the shape of the islands has been quantified. The height of the islands varies with deposition rate, whereas the base diameters are nearly constant around 1260 +/- 35 Angstrom. The island height is 290 +/- 12 Angstrom at a high (2.6 ML/s) deposition rate and decreases to approximately 250 +/- 16 Angstrom for low (0.1 ML/s) and moderate (0.8 ML/s) deposition rates.

引用

收藏

页码：1605 / 1609

页数：5

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