ELECTRONIC-STRUCTURE CALCULATION OF MN-DOPED GAAS

被引：4

作者：

PINO, AD ^{[1
]}

FAZZIO, A ^{[1
]}

LEITE, JR ^{[1
]}

机构：

[1] UNIV SAO PAULO,INST FIS,BR 20516 SAO PAULO,SP,BRAZIL

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 44卷 / 03期

关键词：

D O I：

10.1016/0038-1098(82)90872-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：369 / 372

页数：4

共 17 条

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[2] OPTICAL PROPERTIES OF GAAS-CO
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[4] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
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[J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
[5] CALCULATION OF CARRIER EQUILIBRIUM EFFECTS IN TRANSITION-METAL DOPED SEMICONDUCTORS WITH APPLICATION TO CR-DOPED GAAS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (12): : 2311 - 2323
[6] FAZZIO A, 1979, J PHYS C SOLID STATE, V12, P3469, DOI 10.1088/0022-3719/12/17/018
[7] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE
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[J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4710 - 4720
[8] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2553 - 2559
[9] TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS
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[J]. PHYSICAL REVIEW B, 1980, 22 (10): : 4590 - 4599
[10] ELECTRONIC STATES OF A SUBSTITUTIONAL CHROMIUM IMPURITY IN GAAS
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DIMMOCK, JO
[J]. PHYSICAL REVIEW B, 1979, 20 (04): : 1527 - 1537

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