ATOMIC AND CARRIER PROFILES OF 1-MEV, 2-MEV, 4-MEV, AND 6-MEV SI-30 IMPLANTED INTO GAAS

被引：10

作者：

THOMPSON, PE

WILSON, RG

INGRAM, DC

PRONKO, PP

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

[2] UNIVERSAL ENERGY SYST,DAYTON,OH 45432

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期

关键词：

D O I：

10.1063/1.342715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2986 / 2990

页数：5

共 14 条

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[8] FULLY IMPLANTED GAAS MILLIMETER-WAVE MIXER DIODE USING HIGH-ENERGY IMPLANTATION [J].

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[10] MEV S IMPLANTATION INTO GAAS [J].

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