ON ANOMALOUS CHANNELING EFFECTS IN ION-IMPLANTED SILICON

被引：8

作者：

MAZZONE, AM

机构：

[1] CNR, Bologna, Italy, CNR, Bologna, Italy

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1987年 / 55卷 / 05期

关键词：

D O I：

10.1080/09500838708203756

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 238

页数：4

共 13 条

[1]

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[2]

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[3] CHANNELING PHENOMENA IN OFF-AXIS ION-IMPLANTED (001) SILICON [J].

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SERVIDORI, M ;

MAZZONE, AM .

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[4]

GAROFALO F, 1987, PHYS STAT SOL B, V98, P517

[5] CALCULATION OF CHANNELING EFFECTS DURING ION-IMPLANTATION USING THE BOLTZMANN TRANSPORT-EQUATION [J].

GILES, MD ;

GIBBONS, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :1918-1924

[6] CHANNELING OF B AND ARSENIC NEAR THE SILICON (001) AXIS [J].

HAUTALA, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :75-77

[7]

HAUTALA M, 1985, MATERIALS RES SOC S, V45, P109

[8] 3-DIMENSIONAL MONTE-CARLO SIMULATIONS .1. IMPLANTED PROFILES FOR DOPANTS IN SUB-MICRON DEVICE [J].

MAZZONE, AM ;

ROCCA, G .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1984, 3 (01) :64-71

[9] CHANNELING IN LOW-ENERGY BORON ION-IMPLANTATION [J].

MICHEL, AE ;

KASTL, RH ;

MADER, SR ;

MASTERS, BJ ;

GARDNER, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :404-406

[10]

OEN SO, 1976, NUCL INSTRUM METH, V132, P646

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