KINETICS AND MORPHOLOGY OF GAAS ETCHING IN AQUEOUS CRO3-HF SOLUTIONS

被引：73

作者：

VANDEVEN, J ^{[1
]}

WEYHER, JL ^{[1
]}

VANDENMEERAKKER, JEAM ^{[1
]}

KELLY, JJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期

关键词：

D O I：

10.1149/1.2108680

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：799 / 806

页数：8

共 28 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&

[2] ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB [J].

ELLIOTT, CR ;

REGNAULT, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1557-1562

[3]

FAKTOR MM, 1980, CURRENT TOPICS MATER, V6, P1

[4] INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1. [J].

FRESE, KW ;

MADOU, MJ ;

MORRISON, SR .

JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (24) :3172-3178

[5]

HEIMANN RB, 1982, CRYSTALS, V8, P173

[6] MECHANISMS OF CHROMIUM ELECTRODEPOSITION [J].

HOARE, JP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :190-199

[7] ON THE OBSERVATION OF THE ROUGHENING TRANSITION OF ORGANIC-CRYSTALS, GROWING FROM SOLUTION [J].

JETTEN, LAMJ ;

HUMAN, HJ ;

BENNEMA, P ;

VANDEREERDEN, JP .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :503-516

[8] THE MECHANISM OF GAAS ETCHING IN CRO3-HF SOLUTIONS .2. MODEL AND DISCUSSION [J].

KELLY, JJ ;

VANDEVEN, J ;

VANDENMEERAKKER, JEAM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) :3026-3033

[9]

KELLY JY, UNPUB

[10]

KERN W, 1978, RCA REV, V39, P278

← 1 2 3 →