ANALYSIS OF BARRIER TRANSMISSION IN RESONANT TUNNELING DIODES

被引:20
作者
ARAKI, K
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10.1063/1.339736
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O59 [应用物理学];
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页码:1059 / 1069
页数:11
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共 30 条
[11]   INVESTIGATION OF LOCALIZATION IN A 10-WELL SUPERLATTICE [J].
LITTLETON, RK ;
CAMLEY, RE .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2817-2820
[12]   FREQUENCY LIMIT OF DOUBLE-BARRIER RESONANT-TUNNELING OSCILLATORS [J].
LURYI, S .
APPLIED PHYSICS LETTERS, 1985, 47 (05) :490-492
[13]   RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].
MENDEZ, EE ;
WANG, WI ;
RICCO, B ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1985, 47 (04) :415-417
[14]  
MERZBACHER E, 1970, QUANTUM MECHANICS, P80
[15]   OBSERVATION OF A NEGATIVE DIFFERENTIAL RESISTANCE DUE TO TUNNELING THROUGH A SINGLE BARRIER INTO A QUANTUM-WELL [J].
MORKOC, H ;
CHEN, J ;
REDDY, UK ;
HENDERSON, T ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :70-72
[16]   EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J].
MUTO, S ;
INATA, T ;
OHNISHI, H ;
YOKOYAMA, N ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L577-L579
[17]   OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].
NAKAGAWA, T ;
IMAMOTO, H ;
KOJIMA, T ;
OHTA, K .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :73-75
[18]  
NAKATA Y, 1985, 1985 NAT C REC SEM D, P81
[19]   CALCULATION OF ELECTRON PROPAGATION IN HETEROSTRUCTURES [J].
PRICE, PJ .
SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (03) :213-218
[20]   RESONANT TUNNELING TRANSPORT AT 300-K IN GAAS-ALGAAS QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAY, S ;
RUDEN, P ;
SOKOLOV, V ;
KOLBAS, R ;
BOONSTRA, T ;
WILLIAMS, J .
APPLIED PHYSICS LETTERS, 1986, 48 (24) :1666-1668