STUDY OF TRANSISTOR SWITCHING CIRCUIT STABILITY IN AVALANCHE REGION

被引：16

作者：

HUANG, JST

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1967年 / SC 2卷 / 01期

关键词：

D O I：

10.1109/JSSC.1967.1049775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：10 / &

共 16 条

[1]

ANDRONOW AA, 1949, THEORY OSCILLATION, pCH5

[2]

ANDRONOW AA, 1949, THEORY OSCILLATIONS, pCH6

[3] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J].

ATALLA, MM ;

TANNENBAUM, E ;

SCHEIBNER, EJ .

BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03) :749-783

[4]

CUNNINGHAM WJ, 1958, INTRO NONLINEAR ANAL, pCH5

[5] MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS [J].

ENGLISH, AC .

SOLID-STATE ELECTRONICS, 1963, 6 (05) :511-521

[6] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+

[7] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[8] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

GOETZBERGER, A ;

SCARLETT, RM ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1581-&

[9]

HAMASAKI J, 1963 INT SOL CIRC C, V6, P46

[10]

HUANG JS, UNPUBLISHED

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