INTERACTION OF AL WITH OXIDIZED GE/SI(001) - A SYNCHROTRON-RADIATION PHOTOELECTRON-SPECTROSCOPY STUDY

被引：1

作者：

PRABHAKARAN, K ^{[1
]}

OGINO, T ^{[1
]}

SCIMECA, T ^{[1
]}

OSHIMA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.579160

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Interaction of aluminum with an oxidized sample of ultrathin layer Ge (7 angstrom) deposited on Si(001) at room temperature [Ge (7 angstrom)/Si(001) RT] is studied employing synchrotron radiation photoelectron spectroscopy. Ge (7 angstrom)/Si(001) RT, on exposure to air, forms Ge suboxides, GeO2 and Si suboxides on the surface. GeO2 is selectively removed completely by rinsing the sample in warm water, and during this process a small amount of Si oxides is also formed. Upon depositing Al on this surface, it reacts with oxides of Si and Ge and forms an overlayer of Al2O3 on the surface, thereby reducing the oxides to elemental Si and Ge. Further, the reaction is activated by an increase in surface temperature. In the early stages of the reaction, reduction of suboxides take place in preference to Si02.

引用

页码：509 / 572

页数：64

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