EFFECT OF ELECTRON-BOMBARDMENT AND ANNEALING ON THE HYPERFINE-STRUCTURE IN A-SI-H (P)

被引：6

作者：

SCHUTTE, S

FINGER, F

FUHS, W

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90601-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：411 / 413

页数：3

共 6 条

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[3]

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ISHII, N ;

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[5] HYPERFINE INTERACTION FOR P-RELATED DEFECTS IN P-DOPED A-SI-H AND A-SI1-XCX-H [J].

SHIMIZU, T ;

XU, XX ;

OHTA, T ;

KUMEDA, M ;

ISHII, N .

SOLID STATE COMMUNICATIONS, 1988, 67 (10) :941-944

[6] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM [J].

STUTZMANN, M ;

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PHYSICAL REVIEW B, 1987, 35 (11) :5666-5701

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