EFFECT OF STRAIN ON THE ELECTRONIC-STRUCTURES OF ULTRATHIN LAYER GAP/INP (111) SUPERLATTICE - BULK AND SURFACE

被引：3

作者：

WANG, EG ^{[1
]}

机构：

[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 04期

关键词：

D O I：

10.1016/0749-6036(91)90304-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)1/(InP)1 (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV, which is smaller by 0.31eV than the average of the gaps of bulk GaP (2.91eV) and InP (1.48eV). We show how the fundamental gap and the electron occupation can be varied by changing the bond strain in these systems. © 1991.

引用

页码：431 / 435

页数：5

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