学术探索
学术期刊
新闻热点
数据分析
智能评审

ELECTRONIC-STRUCTURE OF THE (GAP)1/(INP)1 (111) STRAINED-LAYER SUPERLATTICE

被引：36
作者：
KURIMOTO, T
HAMADA, N
机构：
[1] NEC CORP LTD,FUNDAMENTAL RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
[2] NORTHWESTERN UNIV,DEPT PHYS & ASTRON,EVANSTON,IL 60201
[3] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.40.3889
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3889 / 3895
页数：7
相关论文
共 13 条
  • [1] QUASI-PARTICLE ENERGIES IN GAAS AND ALAS
    GODBY, RW
    SCHLUTER, M
    SHAM, LJ
    [J]. PHYSICAL REVIEW B, 1987, 35 (08): : 4170 - 4171
  • [2] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
    GOMYO, A
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    SUZUKI, T
    YUASA, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
  • [3] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
    GOMYO, A
    SUZUKI, T
    KOBAYASHI, K
    KAWATA, S
    HINO, I
    YUASA, T
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
  • [4] OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS
    GOMYO, A
    SUZUKI, T
    IIJIMA, S
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (25) : 2645 - 2648
  • [5] ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES
    HYBERTSEN, MS
    LOUIE, SG
    [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5390 - 5413
  • [6] TOTAL-ENERGY FULL-POTENTIAL LINEARIZED AUGMENTED-PLANE-WAVE METHOD FOR BULK SOLIDS - ELECTRONIC AND STRUCTURAL-PROPERTIES OF TUNGSTEN
    JANSEN, HJF
    FREEMAN, AJ
    [J]. PHYSICAL REVIEW B, 1984, 30 (02): : 561 - 569
  • [7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
    KEATING, PN
    [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &
  • [8] INTERFACE PHENOMENA AT SEMICONDUCTOR HETEROJUNCTIONS - LOCAL-DENSITY VALENCE-BAND OFFSET IN GAAS/ALAS
    MASSIDDA, S
    MIN, BI
    FREEMAN, AJ
    [J]. PHYSICAL REVIEW B, 1987, 35 (18): : 9871 - 9874
  • [9] ELECTRONIC STRUCTURE AND LUMINESCENCE PROCESSES IN IN1-XGAXP ALLOYS
    ONTON, A
    LORENZ, MR
    REUTER, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3420 - &
  • [10] STRONG ORDERING IN GAINP ALLOY SEMICONDUCTORS - FORMATION MECHANISM FOR THE ORDERED PHASE
    SUZUKI, T
    GOMYO, A
    IIJIMA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 396 - 405
12