SURFACE-EMITTING DEVICES WITH DISTRIBUTED BRAGG REFLECTORS GROWN BY HIGHLY PRECISE MOLECULAR-BEAM EPITAXY

被引：15

作者：

SUGIMOTO, M

OGURA, I

SAITO, H

YASUDA, A

KURIHARA, K

KOSAKA, H

NUMAI, T

KASAHARA, K

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation 34, Tsukuba, Ibaraki, 305, Miyukigaoka

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90565-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We realized extremely high absolute thickness controllability around +/-0.3% in molecular beam epitaxy growth of distributed Bragg reflectors, using a modified reflection high energy electron diffraction oscillation measurement technique. Very low threshold current density and high efficiency were obtained in InGaAs/AlGaAs surface emitting lasers by using this technique and a new periodically doped distributed Bragg reflectors.

引用

页码：1 / 4

页数：4

共 9 条

[1] LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS
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[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) : 234 - 236
[2] SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES
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[3] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES
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[4] SURFACE-EMITTING LASER OPERATION IN VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICES WITH A VERTICAL CAVITY
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KASAHARA, K
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1250 - 1252
[5] VERY LOW THRESHOLD CURRENT-DENSITY IN VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES WITH PERIODICALLY DOPED DISTRIBUTED BRAGG REFLECTORS
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OGURA, I
NUMAI, T
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[J]. ELECTRONICS LETTERS, 1992, 28 (04) : 385 - 387
[6] VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICE WITH A PNPN STRUCTURE AND VERTICAL CAVITY
SUGIMOTO, M
NUMAI, T
OGURA, I
KOSAKA, H
KURIHARA, K
KASAHARA, K
[J]. OPTICAL AND QUANTUM ELECTRONICS, 1992, 24 (02) : S121 - S132
[7] DRASTIC REDUCTION OF SERIES RESISTANCE IN DOPED SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS FOR SURFACE-EMITTING LASERS
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[J]. APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2496 - 2498
[8] HIGH-TEMPERATURE PERFORMANCE OF 3-QUANTUM-WELL VERTICAL-CAVITY TOP-EMITTING LASERS
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[J]. ELECTRONICS LETTERS, 1991, 27 (05) : 457 - 458
[9] PRECISION ALGAAS BRAGG REFLECTORS FABRICATED BY PHASE-LOCKED EPITAXY
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WANG, S
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[J]. APPLIED PHYSICS LETTERS, 1990, 56 (25) : 2493 - 2495

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