VOLTAGE-CONTROLLED OPTICAL BISTABILITY ASSOCIATED WITH TWO-DIMENSIONAL EXCITON IN GAAS-ALGAAS MULTIPLE QUANTUM-WELL LASERS

被引：19

作者：

TARUCHA, S

OKAMOTO, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.97614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：543 / 545

页数：3

共 20 条

[1] ACTIVE Q-SWITCHING IN A GAAS/ALGAAS MULTIQUANTUM WELL LASER WITH AN INTRACAVITY MONOLITHIC LOSS MODULATOR [J].

ARAKAWA, Y ;

LARSSON, A ;

PASLASKI, J ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :561-563

[2] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].

CHEMLA, DS ;

MILLER, DAB ;

SMITH, PW ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275

[3]

GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490

[4] REPETITIVE PULSATING STRIPE GEOMETRY GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH A STRIPE BY A SHALLOW ZN DIFFUSION [J].

HANAMITSU, K ;

FUJIWARA, T ;

TAKUSAGAWA, M .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :14-16

[5] BISTABILITY AND NEGATIVE-RESISTANCE IN SEMICONDUCTOR-LASERS [J].

HARDER, C ;

LAU, KY ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :124-126

[6]

HIRAYAMA Y, 1985, JPN J APPL PHYS, V24, pL956

[7]

ISHIBASHI T, 1981, I PHYS C SER, V63, P587

[8] A SEGMENTED ELECTRODE MULTI-QUANTUM-WELL LASER DIODE [J].

IWAMURA, H ;

TARUCHA, S ;

SAKU, T ;

HORIKOSHI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11) :L751-L753

[9] BISTABLE OPERATION IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS EXCITATION [J].

KAWAGUCHI, H ;

IWANE, G .

ELECTRONICS LETTERS, 1981, 17 (04) :167-168

[10] ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J].

LASHER, GJ .

SOLID-STATE ELECTRONICS, 1964, 7 (10) :707-716

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