SELECTIVE GROWTH OF ULTRA-LOW RESISTANCE GAAS/INGAAS FOR HIGH-PERFORMANCE INGAAS FETS

被引：7

作者：

HIRUMA, K

YAZAWA, M

MATSUMOTO, H

KAGAYA, O

MIYAZAKI, M

UMEMOTO, Y

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90468-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

To minimize the source resistance of a doped-channel InGaAs heterostructure FET grown on a GaAs substrate, GaAs, InGaAs and InAs selective growth conditions are studied by metalorganic vapor phase epitaxy (MOVPE). It is found that the lowest growth temperatures with complete selectivity for InGaAs (indium composition less than 0.2) and InAs are 540 and 400-degrees-C, respectively. The contact resistance at the regrown interface measured with the transmission line model (TLM), is minimized to 5 x 10(-9) OMEGA cm2 when the Si-doped GaAs is regrown using a side contact structure. However, the contact resistance increases as the in composition in the regrown InGaAs increases. This might be due to the strain or dislocations caused by lattice mismatching between GaAs and InGaAs.

引用

页码：255 / 259

页数：5

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