RF RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON ON FUSED-SILICA FOR MOSFET DEVICES

被引：13

作者：

KOBAYASHI, Y

FUKAMI, A

SUZUKI, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 05期

关键词：

D O I：

10.1149/1.2115776

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1188 / 1194

页数：7

共 17 条

[1] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[2] GROWTH OF SINGLE-CRYSTAL SILICON ISLANDS ON BULK FUSED-SILICA BY CO-2 LASER ANNEALING [J].

HAWKINS, WG ;

BLACK, JG ;

GRIFFITHS, CH .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :319-321

[3] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].

HERRING, C .

BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290

[4]

ISHIWARA H, 1983, JPN J APPL PHYS S221, V22, P607

[5]

Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7

[6] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J].

KAMINS, TI ;

PIANETTA, PA .

ELECTRON DEVICE LETTERS, 1980, 1 (10) :214-216

[7] MOSFETS IN ELECTRON-BEAM RECRYSTALLIZED POLYSILICON [J].

KAMINS, TI ;

VONHERZEN, BP .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :313-315

[8] EFFECT OF HEAT-TREATMENT ON RESIDUAL-STRESS AND ELECTRON HALL-MOBILITY OF LASER ANNEALED SILICON-ON-SAPPHIRE [J].

KOBAYASHI, Y ;

NAKAMURA, M ;

SUZUKI, T .

APPLIED PHYSICS LETTERS, 1982, 40 (12) :1040-1042

[9]

KOBAYASHI Y, 1983, ELECTRON DEV LETT, V4, P132

[10]

Lam H. W., 1980, International Electron Devices Meeting. Technical Digest, P559

← 1 2 →