EFFECT OF HEAT-TREATMENT ON RESIDUAL-STRESS AND ELECTRON HALL-MOBILITY OF LASER ANNEALED SILICON-ON-SAPPHIRE

被引：23

作者：

KOBAYASHI, Y

NAKAMURA, M

SUZUKI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 12期

关键词：

D O I：

10.1063/1.92988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1040 / 1042

页数：3

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共 13 条

[1] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON
ANASTASSAKIS, E
PINCZUK, A
BURSTEIN, E
POLLAK, FH
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +
[2] IS SOS READY FOR VLSI
BOREL, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 145 - 150
[3] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY
ENGLERT, T
ABSTREITER, G
PONTCHARRA, J
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33
[4] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[5] 7000-GATE MICROPROCESSOR ON SOS - PULCE
ISOBE, M
IWAMURA, J
OHHASHI, M
KOIKE, H
MAEGUCHI, K
SATO, T
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 588 - 595
[6] IMPROVEMENT OF CHARACTERISTICS IN SOS MOSFETS BY LASER ANNEALING
KOBAYASHI, Y
IKEDA, T
NAKAMURA, M
SUZUKI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 181 - 186
[7] KOBAYASHI Y, 1980, 158TH ECS M, P1195
[8] KOBAYASHI Y, 1981, JPN J APPL PHYS, V4, pL249
[9] MAGNETORESISTANCE AND ELECTRONIC-STRUCTURE OF SI ON SAPPHIRE
OHMURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 233 - 238
[10] STRESS-RELIEVED REGROWTH OF SILICON ON SAPPHIRE BY LASER ANNEALING
SAIHALASZ, GA
FANG, FF
SEDGWICK, TO
SEGMULLER, A
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 419 - 422