IMPROVEMENT OF CHARACTERISTICS IN SOS MOSFETS BY LASER ANNEALING

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327

[2] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 275 - 277

[3] IS SOS READY FOR VLSI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 145 - 150

[4] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33

[5] HAM WE, 1977, RCA REV, V38, P351

[6] ELECTRON-MICROSCOPE STUDY OF INTRINSIC AND EXTRINSIC STACKING-FAULTS, AND TWINS IN SOS AT THE EARLY STAGE OF EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 426 - 434

[7] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[8] HIGH ELECTRON-MOBILITY SILICON FILMS GROWN ON SAPPHIRE AT HIGH GROWTH-RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 547 - 550

[9] ISOBE M, 1970, IEEE T ELECTRON DEVI, V26, P588

[10] IMPROVEMENT OF CRYSTALLINE QUALITY OF SOS WITH LASER IRRADIATION TECHNIQUES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L249 - L252

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327

[2] MISFIT DISLOCATIONS IN HETEROEPITAXIAL SI ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 275 - 277

[3] IS SOS READY FOR VLSI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 145 - 150

[4] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33

[5] HAM WE, 1977, RCA REV, V38, P351

[6] ELECTRON-MICROSCOPE STUDY OF INTRINSIC AND EXTRINSIC STACKING-FAULTS, AND TWINS IN SOS AT THE EARLY STAGE OF EPITAXIAL-GROWTH [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 426 - 434

[7] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[8] HIGH ELECTRON-MOBILITY SILICON FILMS GROWN ON SAPPHIRE AT HIGH GROWTH-RATE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 547 - 550

[9] ISOBE M, 1970, IEEE T ELECTRON DEVI, V26, P588

[10] IMPROVEMENT OF CRYSTALLINE QUALITY OF SOS WITH LASER IRRADIATION TECHNIQUES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L249 - L252