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CHANNEL PROFILE ENGINEERING FOR MOSFETS WITH 100-NM CHANNEL LENGTHS

被引：37
作者：
JACOBS, JB
ANTONIADIS, D
机构：
[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 05期
关键词：
D O I：
10.1109/16.381982
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effective inversion electron mobility and several short-channel effects are examined for different channel doping profiles in NMOSFET's with L(eff) near 100 nm using device simulators. For given threshold voltage, the effective mobility depends on the doping profile shape when the ionized dopant impurity scattering near the surface is nonnegligible as may be the case with the high doping required for proper scaling to L(eff) less than or equal to 100 mm. In this regime, super-steep retrograde profiles result in higher effective mobility values than conventional step doping profiles while allowing deeper drain/source junctions.
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收藏
页码：870 / 875
页数：6
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