MODULAR ELECTRON BEAM SOURCE FOR THIN FILM DEPOSITION

[1] FOCUSED-BEAM ELECTRON BOMBARDMENT EVAPORATOR [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (07) : 901 - +

[2] GROWTH OF THIN METAL FILMS UNDER APPLIED ELECTRIC FIELD (VACUUM DEPOSITION COALESCENCE OF NUCLEI E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (05) : 140 - +

[3] INFLUENCE OF ELECTRIC FIELD ON GROWTH OF THIN METAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2249 - &

[4] NUCLEATION OF THIN FILMS [J]. NATURE, 1966, 210 (5035) : 512 - &

[5] HOLLAND L, 1963, VACUUM DEPOSITION TH, P135

[6] STRUCTURE ET POUVOIR REFLECTEUR DES COUCHES DE SILICIUM OBTENUES PAR EVAPORATION SOUS VIDE [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1959, 20 (04): : 504 - 506

[7] SIDDAL G, 1961, 8 T NATL VAC S, P1017

[8] THUN R, 1959, 6 AM VAC SOC T NAT V, P192

[9] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .I. EXPERIMENTAL PROCEDURE + INITIAL ASSESSMENT [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (100): : 691 - &

[1] FOCUSED-BEAM ELECTRON BOMBARDMENT EVAPORATOR [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (07) : 901 - +

[2] GROWTH OF THIN METAL FILMS UNDER APPLIED ELECTRIC FIELD (VACUUM DEPOSITION COALESCENCE OF NUCLEI E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (05) : 140 - +

[3] INFLUENCE OF ELECTRIC FIELD ON GROWTH OF THIN METAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2249 - &

[4] NUCLEATION OF THIN FILMS [J]. NATURE, 1966, 210 (5035) : 512 - &

[5] HOLLAND L, 1963, VACUUM DEPOSITION TH, P135

[6] STRUCTURE ET POUVOIR REFLECTEUR DES COUCHES DE SILICIUM OBTENUES PAR EVAPORATION SOUS VIDE [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1959, 20 (04): : 504 - 506

[7] SIDDAL G, 1961, 8 T NATL VAC S, P1017

[8] THUN R, 1959, 6 AM VAC SOC T NAT V, P192

[9] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .I. EXPERIMENTAL PROCEDURE + INITIAL ASSESSMENT [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (100): : 691 - &