EFFECT OF CARBON ON THE MINORITY-CARRIER LIFETIME IN HEAT-TREATED OXYGEN-CONTAINING SILICON

被引：3

作者：

GLINCHUK, KD

LITOVCHENKO, NM

SALNIK, ZA

SKRYL, SI

TROSHIN, AL

机构：

[1] Acad of Sciences of the Ukrainian, SSR, Inst of Semiconductors, Kiev,, USSR, Acad of Sciences of the Ukrainian SSR, Inst of Semiconductors, Kiev, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 87卷 / 02期

关键词：

D O I：

10.1002/pssa.2210870249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K149 / K152

页数：4

共 3 条

[1] EFFECT OF HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN OXYGEN-CONTAINING SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA ;

SKRYL, SI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 79 (02) :K159-K163

[2] ON THE EFFECT OF HIGH-TEMPERATURE HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01) :K75-K78

[3] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR [J].

KISHINO, S ;

MATSUSHITA, Y ;

KANAMORI, M ;

IIZUKA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :1-12

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