ON THE EFFECT OF HIGH-TEMPERATURE HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN SILICON

被引：4

作者：

GLINCHUK, KD

LITOVCHENKO, NM

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 01期

关键词：

D O I：

10.1002/pssa.2210660167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K75 / K78

页数：4

共 14 条

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[2]

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[3] EFFECT OF QUENCHING RATE AND ANNEALING ON CONCENTRATION OF QUENCHED-IN RECOMBINATION CENTERS IN HEAT-TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

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[4] SOLUBILITY AND ORIGIN OF THERMALLY INDUCED RECOMBINATION CENTERS IN N-TYPE AND P-TYPE SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

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[5] ROLE OF IMPURITIES IN FORMATION OF QUENCHED-IN RECOMBINATION CENTERS IN THERMALLY TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

MERKER, R .

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[6] DECAY OF EXCESS CARRIER CONCENTRATION IN THERMALLY TREATED SILICON [J].

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LITOVCHE.NM ;

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MERKER, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02) :749-&

[7] CARRIER LIFETIME OF HEAT-TREATED SILICON-CRYSTALS [J].

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PIEPER, H .

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[8] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J].

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[9] HEAT-TREATMENT BEHAVIOR OF MICRODEFECTS AND RESIDUAL IMPURITIES IN CZ SILICON-CRYSTALS [J].

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[10]

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