EFFECT OF HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN OXYGEN-CONTAINING SILICON

被引：6

作者：

GLINCHUK, KD

LITOVCHENKO, NM

SALNIK, ZA

SKRYL, SI

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 02期

关键词：

D O I：

10.1002/pssa.2210790253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K159 / K163

页数：5

共 7 条

[1] STRUCTURE AND FORMATION KINETICS OF OXYGEN-INDUCED RECOMBINATION CENTERS IN HEAT-TREATED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM ;

SALNIK, ZA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :83-87

[2] DECAY OF EXCESS CARRIERS IN THERMALLY TREATED OXYGEN-DOPED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02) :549-555

[3] ON THE EFFECT OF HIGH-TEMPERATURE HEAT-TREATMENT ON THE MINORITY-CARRIER LIFETIME IN SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (01) :K75-K78

[4] SOME ASPECTS OF THE EFFECT OF HEAT-TREATMENT ON THE MINORITY-CARRIER DIFFUSION LENGTH IN LOW RESISTIVITY P-TYPE SILICON [J].

HO, CT ;

WALD, FV .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :103-107

[5] EFFECT OF OXIDE PRECIPITATES ON MINORITY-CARRIER LIFETIME IN CZOCHRALSKI-GROWN SILICON [J].

MIYAGI, M ;

WADA, K ;

OSAKA, J ;

INOUE, N .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :719-721

[6] GENERATION PROCESS OF DISLOCATIONS IN PRECIPITATE-CONTAINING SILICON-CRYSTALS [J].

NISHINO, Y ;

IMURA, T .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 73 (01) :173-182

[7] NUCLEATION OF OXYGEN PRECIPITATIONS AND EFFICIENCY OF INTERNAL GETTERING CENTERS IN CZOCHRALSKI SILICON [J].

PEIBST, H ;

RAIDT, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :253-260

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