ADDITIVE NITROGEN EFFECTS ON OXYGEN PLASMA DOWNSTREAM ASHING

被引:37
作者
FUJIMURA, S
SHINAGAWA, K
NAKAMURA, M
YANO, H
机构
[1] Basic Process Development Div, Nakahara-ku, Kawasaki
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期
关键词
Actinometry; Additive nitrogen 0 2 + N2 plasma; Downstream ashing; Relative concentration of atomic oxygen;
D O I
10.1143/JJAP.29.2165
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using an improved actinometry method, additive nitrogen effects on oxygen plasma downstream ashing have been studied. The ion current of the Langmuir probe and emission intensity change in OI(7774) and OI(8446) as a function of nitrogen mixing ratio showed that emission caused by dissociative excitation of oxygen molecules did not significantly influence the actinometry in our experiment. Thus, the actinometry measured accurate relative concentrations of atomic oxygen in the plasma by selecting XeI(4671) or XeI(4624) for the actinometer to OI(7774) and OI(8446) or by using ArI(7503) or ArI(7067) for the actinometer to OI(6258) and OI(4368). The change in the ashing rate and the relative concentration of atomic oxygen as a function of the nitrogen mixing ratio corresponded well, and both values at 10% nitrogen mixing were twice those with no nitrogen mixing. The activation energy was unchanged regardless of additive nitrogen. Therefore the role of nitrogen as the additive impurity gas is only to increase oxygen in the plasma. © 1990 IOP Publishing Ltd.
引用
收藏
页码:2165 / 2170
页数:6
相关论文
共 43 条
[11]   PLASMA-ETCHING OF ORGANIC MATERIALS .1. POLYIMIDE IN O2-CF4 [J].
EGITTO, FD ;
EMMI, F ;
HORWATH, RS ;
VUKANOVIC, V .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :893-904
[12]   ASHING OF ION-IMPLANTED RESIST LAYER [J].
FUJIMURA, S ;
KONNO, J ;
HIKAZUTANI, K ;
YANO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (10) :2130-2136
[13]   HEAVY-METAL CONTAMINATION FROM RESISTS DURING PLASMA STRIPPING [J].
FUJIMURA, S ;
YANO, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) :1195-1201
[14]  
FUJIMURA S, 1989, 9TH P S PLASM CHEM, V2, P1062
[15]   ELECTRON IMPACT EXCITATION OF RARE GASES [J].
GANAS, PS ;
GREEN, AES .
PHYSICAL REVIEW A, 1971, 4 (01) :182-&
[16]   ELECTRON-IMPACT EXCITATION OF THE 3P(P-5) STATE OF ATOMIC OXYGEN [J].
GERMANY, GA ;
ANDERSON, RJ ;
SALAMO, GJ .
JOURNAL OF CHEMICAL PHYSICS, 1988, 89 (04) :1999-2002
[17]  
Gottscho R. A., 1983, Plasma Chemistry and Plasma Processing, V3, P193, DOI 10.1007/BF00566020
[18]  
GRAY DE, 1982, AM I PHYSICS HDB, P7
[19]   OXIDATIVE REMOVAL OF PHOTORESIST BY OXYGEN FREON-116 DISCHARGE PRODUCTS [J].
HANNON, JJ ;
COOK, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1164-1169
[20]  
HAYASAKA N, 1988, P 10 S DRY PROC I EL, P125