ASHING OF ION-IMPLANTED RESIST LAYER

被引：40

作者：

FUJIMURA, S

KONNO, J

HIKAZUTANI, K

YANO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.2130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2130 / 2136

页数：7

共 7 条

[1] ION-IMPLANTATION CHANGE IN THE CHEMICAL-STRUCTURE OF A RESIST [J].

FUJIMURA, S ;

YANO, H ;

KONNO, J .

[2] HEAVY-METAL CONTAMINATION FROM RESISTS DURING PLASMA STRIPPING [J].

FUJIMURA, S ;

YANO, H .

[3]

FUJIMURA S, ELECTROCHEM SOC P, V887, P126

[4] DRY ETCH RESISTANCE OF ORGANIC MATERIALS [J].

GOKAN, H ;

ESHO, S ;

OHNISHI, Y .

[5] CARBONIZED LAYER FORMATION IN ION-IMPLANTED PHOTORESIST MASKS [J].

ORVEK, KJ ;

HUFFMAN, C .

[6]

Tsunokuni K., 1987, 19TH C SOL STAT DEV, P195

[7]

CRC HDB CHEM PHYSICS