ELECTRON-CONCENTRATION DEPENDENCE OF ABSORPTION AND REFRACTION IN N-IN0.53GA0.47AS NEAR THE BAND-EDGE

被引：44

作者：

HAHN, D ^{[1
]}

JASCHINSKI, O ^{[1
]}

WEHMANN, HH ^{[1
]}

SCHLACHETZKI, A ^{[1
]}

ORTENBERG, MV ^{[1
]}

机构：

[1] HUMBOLDT UNIV BERLIN,LEHRSTUHL MAGNETOTRANSPORT,INST PHYS,D-10115 BERLIN,GERMANY

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 10期

关键词：

ABSORPTION COEFFICIENT; BAND-GAP SHIFT; ELECTRON-CONCENTRATION DEPENDENCE; N-IN0.53GA0.47AS; REFRACTIVE INDEX;

D O I：

10.1007/BF02655448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical constants of InGaAs were determined as a function of electron concentration in the range from 10(15) to 2 x 10(19) cm(3) by reflectance- and transmission-spectroscopy. A pronounced shift of the fundamental absorption edge toward shorter wavelengths with increasing doping concentration was found. The experimental results can be satisfactorily explained by band-filling and band-gap shrinkage.

引用

页码：1357 / 1361

页数：5

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