LOW-PRESSURE ETCHING OF GAAS WITH MULTIPOLAR PLASMA-CONFINEMENT

[1] Chapman B. N., 1980, GLOW DISCHARGE PROCE, P143

[2] EPRATH LM, 1981, SOLID STATE TECHNOL, V182

[3] MAGNETIC MULTIPOLE CONTAINMENT OF LARGE UNIFORM COLLISIONLESS QUIESCENT PLASMAS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) : 726 - 731

[4] MANTEI TD, 1983, J ELECTROCHEM SOC, V130, P1959

[5] DAMAGE INDUCED IN SI BY ION MILLING OR REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3272 - 3277

[6] CHARACTERIZATION AND CONTROL OF SILICON SURFACE MODIFICATION PRODUCED BY CCL4 REACTIVE ION ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) : 408 - 416

[7] ANALYSIS OF ION INDUCED SURFACE DAMAGE ON SILICON ETCHED IN A CF4 PLASMA [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 746 - 748

[8] GLOW-DISCHARGE PHENOMENA IN PLASMA ETCHING AND PLASMA DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 319 - 324

[9] PLASMA-ETCHING IN A MULTIPOLAR DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1638 - 1647

[1] Chapman B. N., 1980, GLOW DISCHARGE PROCE, P143

[2] EPRATH LM, 1981, SOLID STATE TECHNOL, V182

[3] MAGNETIC MULTIPOLE CONTAINMENT OF LARGE UNIFORM COLLISIONLESS QUIESCENT PLASMAS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (06) : 726 - 731

[4] MANTEI TD, 1983, J ELECTROCHEM SOC, V130, P1959

[5] DAMAGE INDUCED IN SI BY ION MILLING OR REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3272 - 3277

[6] CHARACTERIZATION AND CONTROL OF SILICON SURFACE MODIFICATION PRODUCED BY CCL4 REACTIVE ION ETCHING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) : 408 - 416

[7] ANALYSIS OF ION INDUCED SURFACE DAMAGE ON SILICON ETCHED IN A CF4 PLASMA [J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 746 - 748

[8] GLOW-DISCHARGE PHENOMENA IN PLASMA ETCHING AND PLASMA DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 319 - 324

[9] PLASMA-ETCHING IN A MULTIPOLAR DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1638 - 1647