ANALYSIS OF ION INDUCED SURFACE DAMAGE ON SILICON ETCHED IN A CF4 PLASMA

[1] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 687 - 689

[2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[3] BRILLSON LJ, 1984, B AM PHYS SOC, V29, P513

[4] Coburn J.W., 1982, AVS MONOGRAPH SERIES

[5] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[6] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[7] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[8] EFFECT OF NEUTRAL ION-BEAM SPUTTERING AND ETCHING ON SILICON [J]. THIN SOLID FILMS, 1982, 90 (03) : 231 - 235

[9] EPITAXIAL GROWTH OF INDIUM ANTIMONIDE FILMS AS STUDIED IN SITU BY ELECTRON DIFFRACTION [J]. SURFACE SCIENCE, 1968, 9 (02) : 306 - &

[10] PANG SW, 1984, SOLID STATE TECHNOL, V27, P249

[1] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 687 - 689

[2] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[3] BRILLSON LJ, 1984, B AM PHYS SOC, V29, P513

[4] Coburn J.W., 1982, AVS MONOGRAPH SERIES

[5] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540

[6] APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) : 1150 - 1161

[7] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[8] EFFECT OF NEUTRAL ION-BEAM SPUTTERING AND ETCHING ON SILICON [J]. THIN SOLID FILMS, 1982, 90 (03) : 231 - 235

[9] EPITAXIAL GROWTH OF INDIUM ANTIMONIDE FILMS AS STUDIED IN SITU BY ELECTRON DIFFRACTION [J]. SURFACE SCIENCE, 1968, 9 (02) : 306 - &

[10] PANG SW, 1984, SOLID STATE TECHNOL, V27, P249