OBSERVATION OF BURIED OXIDE LAYERS IN SILICON BY MICROPROBE RBS

被引：2

作者：

KINOMURA, A

LOHNER, T

KATAYAMA, Y

TAKAI, M

RYSSEL, H

SCHORK, R

CHAYAHARA, A

HORINO, Y

FUJII, K

SATOU, M

机构：

[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

[3] FRAUNHOFER ARBEITSGRP INTEGRIERTE SCHALTUNGEN,W-8520 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 77卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(93)95568-P

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Buried oxide layers formed by implantation in silicon were observed by microprobe RBS with 1.5 MeV He+. A cross-sectional image of a local oxide layer was obtained by imaging the decrease in silicon signals. Uniformly implanted samples annealed at 1260 and 1300-degrees-C were observed by RBS-mapping images. A nonuniform region, indicating the absence of surface silicon, was found in the mapping images for annealing at 1260-degrees-C, while the buried and surface layers for annealing at 1300-degrees-C were found to be uniform.

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页码：369 / 372

页数：4

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