PROFILES OF OPTICAL-ABSORPTION CONSTANT AND INTERFACE COMPOSITION IN EPITAXIAL SILICON FILMS

被引：4

作者：

KUHL, C

DRUMINSKI, M

WITTMAACK, K

机构：

[1] SIEMENS AG,RES LABS,D-8000 MUNICH 80,FED REP GER

[2] GESELLSCHAFT STRAHLEN & UMWELT FORSCH MBH,PHYS TECHN ABT,D-8042 NEUHERBERG,BUNDES REPUBLIK

来源：

THIN SOLID FILMS | 1976年 / 37卷 / 03期

关键词：

D O I：

10.1016/0040-6090(76)90601-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：317 / 321

页数：5

共 12 条

[1]

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[2] THIN-FILM EVALUATION TECHNIQUES FOR ESFI SOS TECHNOLOGY [J].

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SCHWIDEFSKY, F ;

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TAKACS, D .

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[3]

DRUMINSKI M, 1974, 139 EL SOC M NEW YOR

[4]

DRUMINSKI M, 1974, GDCH M GRUNDLAGEN EP

[5] OPTICAL PROPERTIES OF CADMIUM SULFIDE AND ZINC SULFIDE FROM 0.6-MICRON TO 14-MICRONS [J].

HALL, JF ;

FERGUSON, WFC .

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[6] OPTICAL INVESTIGATION OF DIFFERENT SILICON FILMS [J].

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SCHLOTTERER, H ;

SCHWIDEFSKY, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1496-1500

[7] OPTICALLY EFFECTIVE INTERMEDIATE LAYER BETWEEN EPITAXIAL SILICON AND SPINEL OR SAPPHIRE [J].

KUHL, C ;

SCHLOTTERER, H ;

SCHWIDEFSKY, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :97-100

[8] INTERFACE PROPERTIES OF SI ON SAPPHIRE AND SPINEL [J].

SCHLOTTERER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :29-36

[9]

TIHANYI J, 1972, SIEMENS FORSCH ENTWI, V1, P263

[10]

Wittmaack K., 1973, International Journal of Mass Spectrometry and Ion Physics, V11, P23, DOI 10.1016/0020-7381(73)80052-X

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