DONOR AND ACCEPTOR BEHAVIOR OF GOLD IN SILICON

被引：25

作者：

UTZIG, J ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] SONDERFORSCH BEREICH,D-3400 GOTTINGEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 07期

关键词：

D O I：

10.1063/1.95396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：761 / 763

页数：3

共 7 条

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CARLSON, RO ;

GALLAGHER, CJ .

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[3] COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON [J].

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GRIMMEISS, HG ;

MEIJER, E ;

JAROS, M .

PHYSICAL REVIEW B, 1980, 22 (08) :3917-3934

[4] EVIDENCE THAT THE GOLD DONOR AND ACCEPTOR IN SILICON ARE 2 LEVELS OF THE SAME DEFECT [J].

LEDEBO, LA ;

WANG, ZG .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :680-682

[5] DETERMINATION OF THE FREE-ENERGY LEVEL OF DEEP CENTERS, WITH APPLICATION TO GAAS [J].

PONS, D .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :413-415

[6] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J].

TASCH, AF ;

SAH, CT .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :800-&

[7]

WEBER K, 1982, THESIS GOTTINGEN

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