AVALANCHE BREAKDOWN VOLTAGE OF HYPER-ABRUPT SILICON P-N-JUNCTIONS

被引：5

作者：

GUPTA, AK ^{[1
]}

TYAGI, MS ^{[1
]}

机构：

[1] INDIAN INST TECHNOL, DEPT ELECT ENGN, KANPUR 208016, INDIA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 04期

关键词：

D O I：

10.1016/0038-1101(76)90034-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：342 / 344

页数：3

共 8 条

[1] IONIZATION RATES OF HOLES + ELECTRONS IN SILICON [J].

LEE, CA ;

KLEIMACK, JJ ;

BATDORF, RL ;

WIEGMANN, W ;

LOGAN, RA .

PHYSICAL REVIEW, 1964, 134 (3A) :A761-+

[2] AVALANCHE BREAKDOWN IN GERMANIUM [J].

MILLER, SL .

PHYSICAL REVIEW, 1955, 99 (04) :1234-1241

[3] AVALANCHE BREAKDOWN VOLTAGE OF MULTIPLE EPITAXIAL PN JUNCTIONS [J].

SUNSHINE, RA ;

ASSOUR, J .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :459-&

[4] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J].

SZE, SM ;

GIBBONS, G .

APPLIED PHYSICS LETTERS, 1966, 8 (05) :111-&

[5]

TYAGI MS, 1968, SOLID STATE ELECTRON, V11, P117

[6] MEASUREMENT OF IONIZATION RATES IN DIFFUSED SILICON P-N JUNCTIONS [J].

VANOVERSTRAETEN, R ;

DEMAN, H .

SOLID-STATE ELECTRONICS, 1970, 13 (05) :583-+

[7] AVALANCHE BREAKDOWN IN SILICON DIFFUSED JUNCTIONS [J].

WARNER, RM .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1303-+

[8] USE OF A SCHOTTKY-BARRIER TO MEASURE IMPACT IONIZATION COEFFICIENTS IN SEMICONDUCTORS [J].

WOODS, MH ;

JOHNSON, WC ;

LAMPERT, MA .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :381-394

← 1 →