GROWTH-RATE ANISOTROPY AND MORPHOLOGY OF AUTOEPITAXIAL SILICON FILMS FROM SICL4

被引：29

作者：

VANDENBR.CH ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 04期

关键词：

D O I：

10.1016/0022-0248(74)90067-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：259 / 266

页数：8

共 39 条

[1] SEMICONDUCTOR EPITAXY - GAS PHASE DOPING BY ELECTRIC DISCHARGE [J].

ALEXANDER, JH ;

STERLING, HF .

SOLID-STATE ELECTRONICS, 1967, 10 (05) :485-+

[2] CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICON [J].

ARNOLD, E ;

LADELL, J ;

ABOWITZ, G .

APPLIED PHYSICS LETTERS, 1968, 13 (12) :413-+

[3]

BENJAMIN CE, 1965, MAY EL SOC SAN FRANS

[4]

BOSS DW, 1966, ELECTRONICS DIVISION, V15, P59

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[6] CHARACTERISTICS OF [115] DISLOCATION-FREE FLOAT-ZONED SILICON CRYSTALS [J].

CISZEK, TF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) :799-802

[7]

Donnay JDH, 1937, AM MINERAL, V22, P446

[8]

DONNAY JDH, 1938, B GEOL BELG, V61, P260

[9] GEOMETRICAL STABILITY OF SHALLOW SURFACE DEPRESSIONS DURING GROWTH OF (111) AND (100) EPITAXIAL SILICON [J].

DRUM, CM ;

CLARK, CA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :664-&

[10] ANISOTROPY OF MACROSTEP MOTION AND PATTERN EDGE-DISPLACEMENTS DURING GROWTH OF EPITAXIAL SILICON ON SILICON NEAR [100] [J].

DRUM, CM ;

CLARK, CA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1401-+

← 1 2 3 4 →