TITANIUM DISILICIDE FORMATION BY SPUTTERING OF TITANIUM ON HEATED SILICON SUBSTRATE

被引：15

作者：

TANIELIAN, M

BLACKSTONE, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：673 / 675

页数：3

共 10 条

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GUERRI, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3558-3565

[2] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].

BEYERS, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152

[3]

Chopra K.L, 1969, THIN FILM PHENOMENA

[4] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

[5]

LAU CK, 1983, ECS DIG EXT ABSTR, V83, P569

[6]

LAU CK, 1982, INT EL DEV M, V82, P714

[7]

MURARKA SP, 1983, SILICIDES VLSI APPLI

[8]

REVESZ P, 1983, J APPL PHYS, V54, P1860, DOI 10.1063/1.332237

[9]

TANIELIAN M, UNPUB J ELECTROCHEM

[10]

TANIELIAN M, 1984, EL SOC EXT ABST, V84, P145

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