DEEP LEVEL PHOTODIFFRACTIVE SPECTROSCOPY OF SEMICONDUCTORS

被引：11

作者：

NOLTE, DD

OLSON, DH

GLASS, AM

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defect levels in semi-insulating GaAs and InP are investigated by deep level photodiffractive spectroscopy. Temperature-dependent four-wave mixing based both on photochromic and photorefractive effects permits a determination of the energy levels within the semiconductor band gap. This optical technique eliminates difficulties encountered with high-resistivity material using conventional electrical measurements.

引用

收藏

页码：163 / 165

页数：3

相关论文

共 13 条

[1] ELECTRON DIFFUSION EFFECTS DURING HOLOGRAM RECORDING IN CRYSTALS [J].

AMODEI, JJ .

APPLIED PHYSICS LETTERS, 1971, 18 (01) :22-&

[2] PHOTOREFRACTIVE IMAGING OF SEMICONDUCTOR WAFERS [J].

BYLSMA, RB ;

OLSON, DH ;

GLASS, AM .

APPLIED PHYSICS LETTERS, 1988, 52 (13) :1083-1085

[3] OPTICALLY INDUCED CHANGE OF REFRACTIVE INDICES IN LINBO3 AND LITAO3 [J].

CHEN, FS .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3389-&

[4]

DEVAUD B, 1986, J APPL PHYS, V59, P3126

[5]

GUNTER P, 1988, PHOTOREFRACTIVE MATE

[6] COUPLED WAVE THEORY FOR THICK HOLOGRAM GRATINGS [J].

KOGELNIK, H .

BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (09) :2909-+

[7]

LANG DV, 1979, THERMALLY STIMULATED, P109

[8] MFE CENTER - A CONFIGURATIONALLY BISTABLE DEFECT IN INP-FE [J].

LEVINSON, M ;

STAVOLA, M ;

BESOMI, P ;

BONNER, WA .

PHYSICAL REVIEW B, 1984, 30 (10) :5817-5821

[9] POSITIVE IDENTIFICATION OF THE CR4+-]CR3+ THERMAL TRANSITION IN GAAS [J].

LOOK, DC ;

CHAUDHURI, S ;

EAVES, L .

PHYSICAL REVIEW LETTERS, 1982, 49 (23) :1728-1731

[10] NONEQUILIBRIUM SCREENING OF THE PHOTOREFRACTIVE EFFECT [J].

NOLTE, DD ;

OLSON, DH ;

GLASS, AM .

PHYSICAL REVIEW LETTERS, 1989, 63 (08) :891-894