POSITIVE IDENTIFICATION OF THE CR4+-]CR3+ THERMAL TRANSITION IN GAAS

被引：31

作者：

LOOK, DC ^{[1
]}

CHAUDHURI, S ^{[1
]}

EAVES, L ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 49卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.49.1728

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1728 / 1731

页数：4

相关论文

共 14 条

[1] Blakemore J. S., 1980, Semi-Insulating III-V Materials, P29
[2] INTRINSIC DENSITY NI(T) IN GAAS - DEDUCED FROM BAND-GAP AND EFFECTIVE MASS PARAMETERS AND DERIVED INDEPENDENTLY FROM CR ACCEPTOR CAPTURE AND EMISSION COEFFICIENTS
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 520 - 531
[3] BLAKEMORE JS, UNPUB SEMI INSULATIN, V2
[4] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
CRONIN, GR
HAISTY, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 874 - 877
[5] CHARGE-TRANSFER CR-2+(D4)-]CR-1+(D5) INDUCED BY HYDROSTATIC-PRESSURE IN CHROMIUM-DOPED GAAS
HENNEL, AM
MARTINEZ, G
[J]. PHYSICAL REVIEW B, 1982, 25 (02) : 1039 - 1045
[6] CHROMIUM AS A HOLE TRAP IN GAP AND GAAS
KAUFMANN, U
SCHNEIDER, J
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 747 - 748
[7] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS
KREBS, JJ
STAUSS, GH
[J]. PHYSICAL REVIEW B, 1977, 15 (01): : 17 - 22
[8] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION
KREBS, JJ
STAUSS, GH
[J]. PHYSICAL REVIEW B, 1977, 16 (03): : 971 - 973
[9] Look D., 1980, Semi-Insulating III-V Materials, P183
[10] STATISTICS OF MULTICHARGE CENTERS IN SEMICONDUCTORS - APPLICATIONS
LOOK, DC
[J]. PHYSICAL REVIEW B, 1981, 24 (10): : 5852 - 5862