EXCIMER LASER ANNEALING OF ION-IMPLANTED SILICON

被引：19

作者：

NARAYAN, J

HOLLAND, OW

WHITE, CW

YOUNG, RT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1125 / 1130

页数：6

共 15 条

[1]

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PEARCE, CW .

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[3]

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[4]

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[5] MELTING PHENOMENON AND PROPERTIES OF DEFECTS ASSOCIATED WITH PULSED LASER IRRADIATION [J].

NARAYAN, J ;

WHITE, CW .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (06) :1515-1535

[6] P-N-JUNCTION FORMATION IN BORON-DEPOSITED SILICON BY LASER-INDUCED DIFFUSION [J].

NARAYAN, J ;

YOUNG, RT ;

WOOD, RF ;

CHRISTIE, WH .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :338-340

[7] COMPARATIVE-STUDY OF LASER AND THERMAL ANNEALING OF BORON-IMPLANTED SILICON [J].

NARAYAN, J ;

YOUNG, RT ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3912-3917

[8]

NARAYAN J, 1983, LASER SOLID INTERACT

[9] LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON [J].

POATE, JM ;

LEAMY, HJ ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :918-920

[10]

VONALLMEN M, 1980, LASER ELECTRON BEAM, P6

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