USE OF OPTICAL-EMISSION SPECTROSCOPY TO STUDY HEXAFLUOROETHANE REACTIVE ION-BEAM ETCHING OF SILICON IN THE PRESENCE OF OXYGEN

被引：6

作者：

COX, TI

DESHMUKH, VGI

机构：

来源：

关键词：

D O I：

10.1063/1.96172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：378 / 380

页数：3

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[3]

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[4]

HEATH BA, 1982, 3RD P S PLASM PROC, P421

[5] TECHNOLOGY OF ION-BEAM SOURCES USED IN SPUTTERING [J].

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TACHI, S ;

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