THE GROWTH OF GAALAS GAAS GUIDED WAVE DEVICES BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

ANDREWS, DA

SCOTT, EG

HOUGHTON, AJN

RODGERS, PM

DAVIES, GJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.583108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：813 / 815

页数：3

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