COMPARISON BETWEEN METHANE AND ACETYLENE AS CARBON-SOURCES FOR C-RICH A-SIC-H FILMS

被引：32

作者：

DEMICHELIS, F

CROVINI, G

GIORGIS, F

PIRRI, CF

TRESSO, E

机构：

[1] Dipartimento di Fisica, Politecnico di Torino, 10129 Torino

来源：

关键词：

ACETYLENE; AMORPHOUS HYDROGENATED SIC FILMS; METHANE;

D O I：

10.1016/0925-9635(95)05321-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Films of a-SiC:H were deposited using an ultrahigh vacuum plasma-enhanced CVD system from SiH4 + CH4 and SiH4 + C2H2 gas mixtures. The compositional, optical, structural and photoluminescence properties of the films were characterized. We have shown that using an acetylene plasma it is possible to grow films having an optical gap in the range 2.3-3.3 eV, high uniformity and high deposition rate. IR spectroscopy revealed remarkable differences in carbon and hydrogen incorporation for the different sources.

引用

页码：473 / 477

页数：5

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