PREPARATION OF THIN (0.6 MU-M) CONTINUOUS MONOCRYSTALLINE SILICON OVER SIO2

被引：2

作者：

JASTRZEBSKI, L

CORBOY, JF

PAGLIARO, R

SOYDAN, R

机构：

来源：

关键词：

D O I：

10.1149/1.2113723

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3056 / 3057

页数：2

共 21 条

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