OPERATION OF CMOS DEVICES WITH A FLOATING WELL

被引：13

作者：

ZAPPE, HP ^{[1
]}

GUPTA, RK ^{[1
]}

SAKAI, I ^{[1
]}

HU, CM ^{[1
]}

机构：

[1] NEC CORP,KAWASAKI,KANAGAWA 213,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：335 / 343

页数：9

共 12 条

[1]

COLCLASER RA, 1980, MICROELECTRONICS PRO, P203

[2] EFFECT OF A FLOATING SUBSTRATE ON OPERATION OF SILICON-ON-SAPPHIRE TRANSISTORS [J].

EATON, SS ;

LALEVIC, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) :907-912

[3] CHARACTERIZATION OF SILICON-ON-SAPPHIRE IGFET TRANSISTORS [J].

ELMANSY, YA ;

CAUGHEY, DM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) :1148-1153

[4]

ELMANSY YA, 1975, DEC IEDM TECH DIG, P31

[5] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[6] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].

KATO, K ;

WADA, T ;

TANIGUCHI, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :378-382

[7]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P369

[8] INFLUENCE OF FLOATING SUBSTRATE POTENTIAL ON CHARACTERISTICS OF ESFI MOS-TRANSISTORS [J].

TIHANYI, J ;

SCHLOTTERER, H .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :309-314

[9] PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J].

TIHANYI, J ;

SCHLOTTERER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1017-1023

[10] SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J].

TROUTMAN, RR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) :55-60

← 1 2 →