ELECTRICAL AND STRUCTURAL-PROPERTIES OF GA0.51IN0.49P/GAAS HETEROJUNCTIONS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引:20
作者
PALOURA, EC
GINOUDI, A
KIRIAKIDIS, G
FRANGIS, N
SCHOLZ, F
MOSER, M
CHRISTOU, A
机构
[1] FDN RES & TECHNOL,INST ELECTR STRUCT & LASERS,GR-71110 IRAKLION,GREECE
[2] UNIV STUTTGART,INST PHYS 4,W-7000 STUTTGART 80,GERMANY
[3] UNIV MARYLAND,CALCE CTR ELECTR,COLLEGE PK,MD 20742
[4] UNIV CRETE,DEPT PHYS,GR-71110 IRAKLION,GREECE
关键词
D O I
10.1063/1.106865
中图分类号
O59 [应用物理学];
学科分类号
摘要
Undoped and Se-doped Ga0.51In0.49P/GaAs single heterojunctions grown by metalorganic vapor-phase epitaxy (MOVPE) are characterized with deep-level transient spectroscopy and transmission electron microscopy (TEM). The undoped MOVPE material, grown at 710-degrees-C, is characterized by a deep electron trap with an activation energy that takes values in the range 700-900 meV. Se doping suppresses the formation of this trap when the doping level is higher than 5 X 10(17) cm-3. Furthermore, Se doping suppresses the persistent photoconductivity that is observed in the undoped samples. Finally, analysis with cross-section TEM reveals that the samples undergo partial spinodal decomposition in a direction nearly vertical to the interface.
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页码:2749 / 2751
页数:3
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