DEFECTS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN GAINP LAYERS

被引：28

作者：

FENG, SL ^{[1
]}

BOURGOIN, JC ^{[1
]}

OMNES, F ^{[1
]}

RAZEGHI, M ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.106308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonintentionally doped metalorganic vapor-phase epitaxy Ga(1-x)In(x)P layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep-level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 10(15) cm-3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (approximately 10(13) cm-3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 10(14)-10(15) cm-3.

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页码：941 / 943

页数：3

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