A GSMBE GROWN GAINP/GAAS NARROW BASE DHBT EXHIBITING N-SHAPE NEGATIVE DIFFERENTIAL RESISTANCE WITH VARIABLE PEAK-TO-VALLEY CURRENT RATIO UP TO 1X10(7) AT ROOM-TEMPERATURE

被引：20

作者：

LU, SS ^{[1
]}

WANG, YJ ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,CTR CONDENSED MATTER SCI,TAIPEI,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 02期

关键词：

D O I：

10.1109/55.285373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ga0.51In0.49P/GaAs DHBT with a heavily doped (1 x 10(19) cm-3) narrow base (8 nm) grown by gas source molecular beam epitaxy and fabricated by simple wet chemical etching was demonstrated for the first time. A variable ''N'' shape negative differential resistance (NDR) controlled by base current was observed in the common-emitter current-voltage characteristics of this device at room temperature. A maximum peak-to-valley current ratio of 1 x 10(7) and a maximum current gain of 83 were achieved at room temperature. The largest peak-to-valley current ratio (1 x 10(7)) achieved is, to our knowledge, the highest reported value to date. The NDR characteristics were explained by the base resistance effect.

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页码：60 / 62

页数：3

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