A PLANAR-DOPED 2D-HOLE GAS BASE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

MALIK, RJ

LUNARDI, LM

WALKER, JF

RYAN, RW

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期

关键词：

D O I：

10.1109/55.20396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：7 / 9

页数：3

共 21 条

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[5] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ISHIBASHI, T ;

YAMAUCHI, Y ;

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ITO, H .

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[6]

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[7]

ISHIBASHI T, 1986, INT ELECTRON DEVICE, P86

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LEVI, AFJ ;

YAFET, Y .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :42-44

[9] MEASUREMENT OF HIGH ELECTRON-DRIFT VELOCITY IN A SUB-MICRON, HEAVILY DOPED GRADED GAP ALXGA1-XAS LAYER [J].

LEVINE, BF ;

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KLEINMAN, DA .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :769-771

[10] BULK-BARRIER TRANSISTOR [J].

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