INVESTIGATION OF GAAS ALXGA1-XAS AND INYGA1-YAS GAAS SUPERLATTICES ON SI SUBSTRATES

被引：7

作者：

REDDY, UK

JI, G

HUANG, D

MUNNS, G

MORKOC, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 24期

关键词：

D O I：

10.1063/1.98250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1748 / 1750

页数：3

共 24 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[3]

ASPNES DE, 1980, HDB SEMICONDUCTORS, V2, pCHA4

[4] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[5]

ESAKI L, 1986, IEEE J QUANTUM ELECT, V22, P1161

[6] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[7] LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI [J].

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

PION, M ;

SPECHT, A ;

BURKHART, G ;

APPELMAN, H ;

MCGOUGAN, D ;

RICE, R .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1360-1361

[8] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES [J].

FISCHER, R ;

MORKOC, H ;

NEUMANN, DA ;

ZABEL, H ;

CHOI, C ;

OTSUKA, N ;

LONGERBONE, M ;

ERICKSON, LP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1640-1647

[9] PHOTOREFLECTANCE CHARACTERIZATION OF INTERBAND-TRANSITIONS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND MODULATION-DOPED HETEROJUNCTIONS [J].

GLEMBOCKI, OJ ;

SHANABROOK, BV ;

BOTTKA, N ;

BEARD, WT ;

COMAS, J .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :970-972

[10] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES [J].

GOURLEY, PL ;

BIEFELD, RM ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1985, 47 (05) :482-484

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