COMPUTER-SIMULATION STUDIES OF LOW-ENERGY B-IMPLANTATION INTO AMORPHOUS AND CRYSTALLINE SILICON

被引：16

作者：

GARTNER, K ^{[1
]}

NITSCHKE, M ^{[1
]}

ECKSTEIN, W ^{[1
]}

机构：

[1] MAX PLANCK INST PLASMA PHYS, D-85748 GARCHING, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 83卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95912-O

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Computer simulation results of the depth profiles of B ions implanted with energies in the range of 0.2 to 5 keV into amorphous and [100] Si are presented and discussed. For simulation different binary collision computer codes (MARLOWE, TRIM, BCCRYS) were used. The influence of the interatomic interaction potential is carefully checked. The best overall agreement with experimental data is obtained when using the ''individual potential''. Low energy channeling is proved to be quite different from high energy channeling. Multiple interactions, which are important for channeling, are shown to be insufficiently included in the existing binary collision codes.

引用

页码：87 / 94

页数：8

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